3D low flux, high-powered MMIC amplifiers
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United States of America Patent
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Sep 4, 2018
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Feb 21, 2017
filing date -
Feb 21, 2017
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Abstract
The present disclosure relates systems and methods for providing a three-dimensional device architecture for transistor elements in a power amplifier circuit. Namely, an example system may include a plurality of high electron mobility transistors disposed on a first substrate. A first portion of the plurality of high electron mobility transistors are electrically coupled via respective first level interconnects disposed on the first substrate. The system also includes a plurality of second level interconnects disposed on a second substrate. A second portion of the plurality of high electron mobility transistors are electrically coupled via respective second level interconnects. The first substrate and the second substrate are coupled such that the plurality of high electron mobility transistors provides an amplified output signal via at least one of the first level interconnects or the second level interconnects.
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