Image sensor using nanowire and method of manufacturing the same
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United States of America Patent
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Aug 28, 2018
Grant Date -
Jun 29, 2017
app pub date -
Jul 15, 2016
filing date -
Dec 29, 2015
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Abstract
Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.
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