MRAM dry etching residue removal composition, method of producing magnetoresistive random access memory, and cobalt removal composition
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United States of America Patent
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Aug 14, 2018
Grant Date -
Aug 10, 2017
app pub date -
Apr 26, 2017
filing date -
Oct 31, 2014
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Abstract
An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.
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