Methods for thermally forming a selective cobalt layer
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United States of America Patent
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Aug 7, 2018
Grant Date -
May 12, 2016
app pub date -
Nov 3, 2015
filing date -
Nov 7, 2014
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Abstract
Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.
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