Thermal observer and overload protection for power switches
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United States of America Patent
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Aug 7, 2018
Grant Date -
Jan 29, 2015
app pub date -
Jul 22, 2014
filing date -
Jul 23, 2013
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Abstract
The present disclosure proposes the placing of temperature sensors embedded in the power semiconductor device. In this, at least one of the embedded temperature sensors is placed within or close to the heat source, active areas or channels of the power semiconductor circuit, and at least one of the embedded temperature sensors is placed more apart from the heat source, active areas or channels of the power semiconductor circuit. Furthermore, a new the temperature measurement method is provided, with timing of the temperature measurement and adjusting measurement parameters to appropriate threshold values.
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