Method for producing nitride crystal

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United States of America Patent

PATENT NO 10041186
APP PUB NO 20160355945A1
SERIAL NO

15238945

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Abstract

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It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTD2-56 SUDA-CHO MIZUHO-KU NAGOYA-SHI AICHI-PREFECTURE 467-8530

International Classification(s)

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  • 2016 Application Filing Year
  • C30B Class
  • 583 Applications Filed
  • 450 Patents Issued To-Date
  • 77.19 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances201620172018201920202021202220230255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higashihara, Shuhei Nagoya, JP 18 52
Hirao, Takayuki Nagoya, JP 45 159
Imai, Katsuhiro Nagoya, JP 89 314
Iwai, Makoto Kasugai, JP 118 504
Sakai, Masahiro Nagoya, JP 99 768
Shimodaira, Takanao Nagoya, JP 28 74

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Patent Citation Ranking

  • 1 Citation Count
  • C30B Class
  • 31.02 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges11623214722101 - 1011 - 2021 - 3031 - 4041 - 5051 - 600102030405060708090100110120130140150160170180190200210220230240250

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