Semiconductor device
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United States of America Patent
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Jul 7, 2016
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Aug 28, 2015
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Abstract
An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a coupling transistor made of a p-channel MOSFET and formed in an n−-type semiconductor region over a base made of a p-type semiconductor. The coupling transistor has a resurf layer as a p-type semiconductor region and couples a lower-voltage circuit region to a higher-voltage circuit region to which a power supply potential higher than the power supply potential supplied to the lower-voltage circuit region is supplied. The semiconductor device has a p-type semiconductor region formed in the portion of the n−-type semiconductor region which surrounds the coupling transistor in plan view.
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