Semiconductor device with trench-like feed-throughs

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United States of America Patent

PATENT NO 10032901
SERIAL NO

15091431

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Abstract

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A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.

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Patent Owner(s)

Patent OwnerAddress
VISHAY-SILICONIXCALIFORNIA USA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuo-In Los Altos, US 33 636
Chen, Qufei San Jose, US 22 406
Choi, Calvin San Jose, US 3 15
Kasem, Mohammed Santa Clara, US 12 124
Katraro, Reuven Rishon Lezion, IL 20 650
Lui, Kam Hong Santa Clara, US 14 297
Owyang, King Atherton, US 37 1677
Pattanayak, Deva Saratoga, US 31 337
Terrill, Kyle Santa Clara, US 71 884
Wong, Ronald Millbrae, US 11 177
Xu, Robert Fremont, US 19 412

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