Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
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United States of America Patent
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app pub date -
Mar 2, 2016
filing date -
Oct 19, 2012
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Abstract
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at least a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.
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International Classification(s)
- C09K:MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED ....
- B24B:MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR PO....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- C09G:POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; S....
- G09G:ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING....
- C01F:COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUM....
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