Solid state devices having fine pitch structures
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United States of America Patent
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Jun 14, 2016
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Nov 13, 2012
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Abstract
In various embodiments, a method for forming a memory array includes forming a plurality of rows and columns of hardmask material, etching holes in the one or more layers of insulating material using the combined masking properties of the rows of hardmask material and the columns of hardmask material, and forming memory cells in the holes. The corners of the holes can be rounded.
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