Method for producing an organic semiconductor device

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United States of America Patent

PATENT NO 10005879
SERIAL NO

13365673

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Abstract

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A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.

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Patent Owner(s)

Patent OwnerAddress
CLAP CO LTDGANGNAM-GU SEOUL 06109

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kastler, Marcel Mannheim, DE 23 331
Tan, Bertha Hong Kong, CN 1 6
Vaidyanathan, Subramanian Basel, CH 24 153
Zhou, Mi Singapore, SG 67 357

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