Ilya Zwieback
Inventor
Stats
- 21 US patents issued
- 38 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 21 US Patents Issued
- 38 US Applications Filed
- 242 Total Citation Count
- Jul 1, 2024 Most Recent Filing
- Jan 10, 2000 Earliest Filing
Work History
Patent Owner | Applications Filed | Year |
---|---|---|
INRAD, INC. | 2
| 2000
|
II-IV INCORPORATED | 1
| 2009
|
Il-VI Incorporated | 1
| 2008
|
NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC | 1
| 2000
|
II-VI INCORPORATED | 1
4 6 5 4 2 1 2 8 3 1 1 | 2005
2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2017 |
Inventor Addresses
Address | Duration |
---|---|
New Milford, NJ | Apr 09, 02 - Sep 17, 02 |
Township Of Washington, NJ, US | Sep 19, 23 - Jun 11, 24 |
Township of Washington, NJ, US | Jul 22, 10 - Jul 22, 10 |
Township of Washington, NJ | - |
Township of Washington, NJ, US | May 28, 13 - Feb 20, 24 |
Twp. Of Washington, NJ, US | Jan 06, 22 - Oct 24, 24 |
Twp. of Washington, NJ, US | Mar 03, 16 - Aug 13, 24 |
Washington Township, NJ | Nov 02, 06 - May 22, 08 |
Washington Township, NJ, US | Feb 26, 09 - Aug 29, 24 |
Technology Profile
Technology | Matters | |
---|---|---|
B01D: | SEPARATION | 1 |
B28D: | WORKING STONE OR STONE-LIKE MATERIALS | 2 |
B32B: | LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM | 2 |
Patents / Publication
Patents / Publication # | Year of Publication / Issued | Title | Citations |
---|---|---|---|
2024/0352,617 | 2024 | VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AND SILICON CARBIDE CRYSTALS AND METHODS FOR PRODUCING SAME | 0 |
2024/0287,705 | 2024 | METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY PROVIDING A COMPOUND INCLUDING ALUMINUM AND OXYGEN IN A CAPSULE COMPRISED OF A FIRST AND SECOND MATERIAL | 0 |
12060650 | 2024 | Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same | 0 |
12006591 | 2024 | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material | 0 |
11905618 | 2024 | Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof | 0 |
We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level.
>
Upgrade to our Level for up to -1 portfolios!.