Hong Yu Yu
Inventor
Stats
- 1 US patents issued
- 4 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 1 US Patents Issued
- 4 US Applications Filed
- 90 Total Citation Count
- Nov 12, 2008 Most Recent Filing
- Mar 17, 2004 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., ("TSMC") | 1
| 2008
|
| INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW (IMEC) | 1
1 | 2007
2008 |
| IMEC | 1
| 2007
|
| KATHOLIEKE UNIVERSITEIT LEUVEN | 1
| 2008
|
| NATIONAL UNIVERSITY OF SINGAPORE | 2
| 2004
|
| AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH | 2
| 2004
|
Inventor Addresses
| Address | Duration |
|---|---|
| 10 Kent Ridge Crescent | Apr 07, 09 - Apr 07, 09 |
| Heverlee, BE | Nov 22, 07 - Nov 22, 07 |
| Singapore, SG | Sep 22, 05 - Jul 09, 09 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| H01L: | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | 4 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2009/0174,003 | 2009 | DUAL WORK FUNCTION DEVICE WITH STRESSOR LAYER AND METHOD FOR MANUFACTURING THE SAME | 8 |
| 7514360 | 2009 | Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof | 0 |
| 2008/0191,286 | 2008 | Methods for manufacturing a CMOS device with dual dielectric layers | 32 |
| 2007/0267,762 | 2007 | SEMICONDUCTOR DEVICES | 8 |
| 2005/0205,947 | 2005 | Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof | 10 |
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