Runsheng Wang

Inventor

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Work History

Patent OwnerApplications FiledYear
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
2
10
1
2010
2011
2012
PEKING UNIVERSITY
13
5
1
1
2011
2012
2013
2014

Inventor Addresses

AddressDuration
Beijing, CNMay 10, 12 - Apr 14, 20
Shenzhen, CNAug 15, 24 - Aug 15, 24

Technology Profile

Technology Matters
B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL 1
B82Y: SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES 7
C09K: MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR 1

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
2024/0273,2742024Method for establishing transistor statistical model based on artificial neural network system0
106213862020Method of bias temperature instability calculation and prediction for MOSFET and FinFET0
94786412016Method for fabricating FinFET with separated double gates on bulk silicon2
2016/0153,9232016METHOD FOR EXTRACTING TRAP TIME CONSTANT OF GATE DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE0
2015/0236,1302015METHOD FOR FABRICATING FINFET WITH SEPARATED DOUBLE GATES ON BULK SILICON4

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