Yangyuan Wang

Inventor

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Work History

Patent OwnerApplications FiledYear
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
1
6
2009
2011
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
2
2009
PEKING UNIVERSITY
2
10
4
10
5
2005
2011
2012
2013
2014

Inventor Addresses

AddressDuration
Beijing, CNDec 29, 05 - Nov 29, 16
Haidian District, CNJul 19, 12 - Jul 19, 12
Hangzhou, CNNov 03, 22 - Nov 03, 22
Hangzhou, Zhejiang, CNFeb 02, 23 - Feb 02, 23
Shanghai, CNFeb 18, 10 - Feb 21, 12

Technology Profile

Technology Matters
B82Y: SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES 2
G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 2
G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 1

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
2023/0030,9442023LOGIC CIRCUIT DESIGN METHOD0
2022/0351,0172022CIRCUIT FOR EXTRACTING FEATURES, NEURAL NETWORK AND SIGNAL PROCESSING SYSTEM0
95088392016Short-gate tunneling field effect transistor having non-uniformly doped vertical channel and fabrication method thereof0
94903632016Tunneling field effect transistor having a three-side source and fabrication method thereof0
2016/0133,6952016A METHOD OF INHIBITING LEAKAGE CURRENT OF TUNNELING TRANSISTOR, AND THE CORRESPONDING DEVICE AND A PREPARATION METHOD THEREOF4

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