Robert S Sposili
Inventor
Stats
- 19 US patents issued
- 27 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 19 US Patents Issued
- 27 US Applications Filed
- 373 Total Citation Count
- Aug 28, 2012 Most Recent Filing
- Nov 27, 1998 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK | 1
2 2 2 1 1 1 3 3 | 1998
1999 2001 2002 2003 2004 2005 2007 2009 |
| CARL C. KLING, ATTY. | 1
| 2000
|
| SHARP LABORATORIES OF AMERICA, INC. | 1
3 1 | 2007
2008 2009 |
| SHARP KABUSHIKI KAISHA | 2
1 4 | 2003
2004 2005 |
| Anvik Corporation | 1
2 1 | 2000
2001 2003 |
Inventor Addresses
| Address | Duration |
|---|---|
| New York, NY | Apr 29, 03 - Jan 15, 08 |
| New York, NY, US | Jul 09, 09 - Oct 14, 14 |
| Portland, OR | Apr 19, 05 - Jun 06, 06 |
| Portland, OR, US | Mar 18, 04 - Oct 27, 09 |
| Vancouver, WA, US | Mar 26, 09 - Mar 24, 11 |
| YONKERS, NY, US | May 24, 01 - May 24, 01 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| B23K: | SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM | 5 |
| C30B: | SINGLE-CRYSTAL GROWTH | 5 |
| G02B: | OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS | 1 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 8859436 | 2014 | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon | 0 |
| 8680427 | 2014 | Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon | 0 |
| 2013/0009,074 | 2013 | UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS FORMED USING SEQUENTIAL LATERAL SOLIDIFICATION AND DEVICES FORMED THEREON | 1 |
| 8278659 | 2012 | Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon | 1 |
| 2011/0068,342 | 2011 | Laser Process for Minimizing Variations in Transistor Threshold Voltages | 2 |
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