Hiromu Shiomi

Inventor

Add to Portfolio

Stats

Details

Work History

Patent OwnerApplications FiledYear
TOYOTA JIDOSHA KABUSHIKI KAISHA
2
2005
NISHINO, SHIGEHIRO
1
2000
MEIJO UNIVERSITY EDUCATIONAL FOUNDATION
1
2005
SUMITOMO ELECTRIC INDUSTRIES, LTD.
1
1
3
2
2
1
4
3
4
3
3
1
2
4
2
4
16
4
3
3
4
1
1989
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2002
2005
2009
2010
2011
2012
2013
2014
2015
2017
FUJI ELECTRIC CO., LTD.
1
2017

Inventor Addresses

AddressDuration
Amagasaki-shi, Hyogo, JPFeb 29, 24 - Sep 05, 24
Hyogo, JPJul 21, 92 - Aug 18, 11
Ibaraki, JPAug 06, 20 - Jan 26, 21
Itami, JPJan 01, 91 - Aug 06, 13
Itami-shi, JPMay 03, 12 - May 03, 12
Kyoto, JPSep 27, 07 - Sep 06, 11
Kyoto-Shi, JPAug 02, 07 - Aug 02, 07
Kyoto-shi, JPMay 04, 06 - May 04, 06
Osaka, JPSep 15, 11 - Oct 22, 24
Osaka-shi, JPDec 22, 11 - Sep 03, 20
Suita, JPDec 09, 03 - May 11, 04
Tsukuba, JPApr 24, 18 - Jul 07, 20
Tsukuba-shi, JPApr 20, 17 - Nov 15, 18

Technology Profile

Technology Matters
B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS 1
B05D: PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 1
B44C: PRODUCING DECORATIVE EFFECTS 1

See more…

Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
121258812024Silicon carbide epitaxial substrate and silicon carbide semiconductor device0
2024/0295,0472024SIC SINGLE-CRYSTAL GROWTH APPARATUS0
2024/0068,1252024SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL0
2022/0059,6582022SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE0
112331252022Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device0

See more…


We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level.
> Upgrade to our Level for up to -1 portfolios!.