Hidemitsu Sakamoto

Inventor

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Work History

Patent OwnerApplications FiledYear
NIPPON STEEL & SUMITOMO METAL CORPORATION
2
2
2012
2013
TOYOTA JIDOSHA KABUSHIKI KAISHA
2
3
1
2
2
5
3
9
3
2
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015

Inventor Addresses

AddressDuration
Shizuoka, JPApr 02, 09 - May 03, 12
Shizuoka-ken, JPApr 08, 10 - Dec 29, 11
Sizuoka-ken, JPJul 16, 09 - Jul 16, 09
Susono, JPNov 08, 11 - Oct 16, 18
Susono-shi, JPApr 23, 09 - Jan 12, 17
Susono-shi, Shizuoka, JPFeb 25, 16 - May 05, 16

Technology Profile

Technology Matters
B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM 2
C03B: MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL 1
C30B: SINGLE-CRYSTAL GROWTH 20

Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
101004322018Apparatus for producing SiC single crystal and method for producing SiC single crystal0
99204492018Production method of SiC single crystal0
98967782018Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus0
97839112017Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus0
97324412017Production apparatus and production method of SiC single crystal0

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