Gary E Ruland
Inventor
Stats
- 7 US patents issued
- 10 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 7 US Patents Issued
- 10 US Applications Filed
- 235 Total Citation Count
- May 3, 2024 Most Recent Filing
- Sep 5, 1996 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| THE RESEARCH FOUNDATION FOR THE STATE UNIVERSITY OF NEW YORK | 1
| 1996
|
| II-VI INCORPORATED | 8
1 | 2013
2014 |
Inventor Addresses
| Address | Duration |
|---|---|
| Grand Island, NY | Jun 15, 99 - Jun 15, 99 |
| Morris Plains, NJ, US | Oct 24, 13 - Aug 29, 24 |
| Oakland, NJ, US | Oct 06, 20 - Oct 06, 20 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| A61K: | PREPARATIONS FOR MEDICAL, DENTAL, OR TOILET PURPOSES | 1 |
| B28D: | WORKING STONE OR STONE-LIKE MATERIALS | 2 |
| B32B: | LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM | 2 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2024/0287,705 | 2024 | METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY PROVIDING A COMPOUND INCLUDING ALUMINUM AND OXYGEN IN A CAPSULE COMPRISED OF A FIRST AND SECOND MATERIAL | 0 |
| 12006591 | 2024 | Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material | 0 |
| RE48378 | 2021 | Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof | 0 |
| 10793972 | 2020 | High quality silicon carbide crystals and method of making the same | 0 |
| RE46315 | 2017 | Large diameter, high quality SiC single crystals, method and apparatus | 1 |
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