Pilyeon Park
Inventor
Stats
- 3 US patents issued
- 13 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 3 US Patents Issued
- 13 US Applications Filed
- 573 Total Citation Count
- Sep 20, 2022 Most Recent Filing
- Apr 10, 2013 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| LAM RESEARCH CORPORATION | 1
4 3 | 2014
2015 2016 |
Inventor Addresses
| Address | Duration |
|---|---|
| San Jose, CA, US | Sep 21, 23 - Sep 21, 23 |
| Santa Clara, CA, US | Oct 24, 13 - Mar 16, 23 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| C09K: | MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR | 1 |
| C23C: | COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL | 1 |
| G01K: | MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR | 1 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2023/0298,859 | 2023 | OPTIMIZING EDGE RADICAL FLUX IN A DOWNSTREAM PLASMA CHAMBER | 0 |
| 2023/0084,901 | 2023 | ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES | 1 |
| 11011388 | 2021 | Plasma apparatus for high aspect ratio selective lateral etch using cyclic passivation and etching | 5 |
| 10679868 | 2020 | Isotropic atomic layer etch for silicon oxides using no activation | 1 |
| 2019/0206,697 | 2019 | HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION AND ETCHING | 3 |
We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level.
>
Upgrade to our Level for up to -1 portfolios!.