Yoshikazu Ooshika
Inventor
Stats
- 6 US patents issued
- 9 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 6 US Patents Issued
- 9 US Applications Filed
- 77 Total Citation Count
- Aug 6, 2014 Most Recent Filing
- Mar 5, 2009 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| DOWA ELECTRONICS MATERIALS CO., LTD. | 3
4 1 4 3 | 2009
2010 2011 2013 2014 |
Inventor Addresses
| Address | Duration |
|---|---|
| Kamisato-machi, JP | Jun 16, 16 - Jan 10, 17 |
| Tokyo, JP | Oct 08, 09 - Jul 01, 14 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| C23C: | COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL | 1 |
| C30B: | SINGLE-CRYSTAL GROWTH | 1 |
| H01B: | CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING, OR DIELECTRIC PROPERTIES | 1 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 9543469 | 2017 | III nitride semiconductor epitaxial substrate and III nitride semiconductor light emitting device, and methods of producing the same | 1 |
| 2016/0172,534 | 2016 | III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHODS OF PRODUCING THE SAME | 4 |
| 8765222 | 2014 | Method of manufacturing a p-AlGaN layer | 1 |
| 2014/0166,943 | 2014 | P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE | 1 |
| 8742396 | 2014 | III nitride epitaxial substrate and deep ultraviolet light emitting device using the same | 7 |
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