Hideo NAMITA
Inventor
Stats
- 1 US patents issued
- 14 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 1 US Patents Issued
- 14 US Applications Filed
- 25 Total Citation Count
- Sep 29, 2023 Most Recent Filing
- Aug 21, 2015 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| MITSUBISHI CHEMICAL CORPORATION | 2
1 | 2015
2017 |
Inventor Addresses
| Address | Duration |
|---|---|
| Ibaraki, JP | Dec 17, 15 - May 04, 21 |
| Tokyo, JP | Nov 16, 17 - Mar 28, 24 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| C30B: | SINGLE-CRYSTAL GROWTH | 14 |
| H01L: | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | 11 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2024/0105,449 | 2024 | CONDUCTIVE C-PLANE GaN SUBSTRATE | 0 |
| 11810782 | 2023 | Conductive C-plane GaN substrate | 0 |
| 11591715 | 2023 | GaN single crystal and method for manufacturing GaN single crystal | 0 |
| 11404268 | 2022 | Method for growing GaN crystal and c-plane GaN substrate | 0 |
| 11236439 | 2022 | Non-polar or semi-polar GaN wafer | 0 |
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