Fujio Masuoka

Inventor

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Work History

Patent OwnerApplications FiledYear
FUJO MASUOKA
1
2004
UNISANTIS ELECTRONICS (JAPAN) LTD.
1
17
22
1
2009
2010
2011
2012
UNISANTIS ELECTRONICS SIGNAPORE PTE. LTD.
1
2016
Toshiba Micro-Electronics Corporation
1
1997
SHARP KABUSHIKI KAISHA
4
8
4
2002
2004
2005
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
37
30
48
35
101
93
2011
2012
2013
2014
2015
2016
Fujio Masuoka
2
6
1
11
2
2001
2002
2003
2004
2005
KABUSHIKI KAISHA TOSHIBA
2
6
1
4
11
6
9
4
2
6
5
2
3
2
2
2
1
1984
1985
1986
1987
1988
1990
1991
1992
1993
1994
1995
1996
1997
1998
2001
2002
2004
SAMSUNG ELECTRONICS CO., LTD.
2
6
2
6
2001
2002
2003
2004
TOHOKU UNIVERSITY
2
4
2008
2009
Tokyo Shibaura Electric Co., Ltd.
1
1
1977
1978
TOSHIBA MEMORY CORPORATION
1
1994
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
4
10
71
28
2008
2009
2010
2017
Tokyo Shibaura Denki Kabushiki Kaisha
1
9
1
3
1
2
1978
1981
1982
1983
1984
1985

Inventor Addresses

AddressDuration
2-33-18, Higashikatsuyama, Aoba-ku, Sendai, Miyagi, JPAug 23, 05 - Aug 23, 05
2-33-18, Higashikatsuyama, Aoba-ku, Sendai-shi, Miyagi, JP 981-0923Jul 15, 03 - Jul 15, 03
2-33-18, Higashikatsuyama, Auba-ku, Sendai-shi, Miyagi, JPMar 22, 05 - Mar 22, 05
Chuo-ku, JPMar 05, 09 - Oct 13, 15
Chuo-ku, Tokyo, JPMar 05, 15 - Mar 05, 15
Kanagawa, JPMay 17, 94 - May 17, 94
Kanagawa-ken, JPMay 15, 01 - Aug 12, 04
Miyagi, JPDec 06, 07 - Dec 06, 07
Miyagi, Sendai-shi, JPJun 17, 08 - Jun 17, 08
Sendai, JPApr 27, 04 - Dec 04, 07
Sendai-shi, JPMar 28, 02 - Oct 13, 05
Sendai-shi, Miyagi, JPNov 14, 06 - Jun 17, 08
TOKYO, JPJun 13, 13 - Nov 02, 17
Tokyo, JPNov 02, 93 - Oct 22, 24
Toyko, JPMay 02, 17 - May 02, 17
Yokohama, JPApr 22, 80 - Sep 18, 01
c/o Patent Division, Toshiba Corporation, 1-1-1, Shibaura, Minato-ku, Tokyo, JPSep 14, 93 - Sep 14, 93

Technology Profile

Technology Matters
B82Y: SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES 4
C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 1
C30B: SINGLE-CRYSTAL GROWTH 1

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
121273852024Pillar-shaped semiconductor device and method for producing the same0
121085852024Manufacturing method of pillar-shaped semiconductor device0
120966082024Pillar-shaped semiconductor device and manufacturing method thereof1
120276272024Pillar-shaped semiconductor device having connection material layer for anchoring wiring conductor layer and method for producing the same0
120290222024Pillar-shaped semiconductor device and method for producing the same0

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