Andrew N MacInnes
Inventor
Stats
- 6 US patents issued
- 7 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 6 US Patents Issued
- 7 US Applications Filed
- 140 Total Citation Count
- Mar 19, 2012 Most Recent Filing
- Mar 20, 1991 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| PRESIDENT AND FELLOWS OF HARVARD COLLEGE | 1
1 1 2 | 1991
1992 1995 1997 |
| TRIQUINT SEMICONDUCTOR, INC. | 1
2 | 1995
1997 |
| FINISAR CORPORATION | 1
| 2012
|
| UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION | 1
2 | 1992
1997 |
| QORVO US, INC. | 2
| 2003
|
| NORTHEASTERN UNIVERSITY | 1
| 1991
|
Inventor Addresses
| Address | Duration |
|---|---|
| Allen, TX | Feb 14, 06 - Feb 14, 06 |
| Allen, TX, US | Oct 28, 04 - Sep 20, 12 |
| Dorchester, MA | Apr 05, 94 - Apr 05, 94 |
| Quincy, MA | Apr 14, 98 - Dec 28, 99 |
| Sommerville, MA | Aug 24, 93 - Aug 24, 93 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| B05D: | PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL | 1 |
| C23C: | COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL | 1 |
| C30B: | SINGLE-CRYSTAL GROWTH | 1 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2012/0236,891 | 2012 | LASERS WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM WITH REDUCED TRAPS | 8 |
| 6998320 | 2006 | Passivation layer for group III-V semiconductor devices | 2 |
| 2004/0214,401 | 2004 | Passivation layer for group III-V semiconductor devices | 8 |
| 6008525 | 1999 | Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component | 22 |
| 5760462 | 1998 | Metal, passivating layer, semiconductor, field-effect transistor | 26 |
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