Toru Kinoshita

Inventor

Add to Portfolio

Stats

Details

Work History

Patent OwnerApplications FiledYear
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
2
2012
INTERSOUTH PARTNERS VI, L.P.
2
2012
JAPAN AEROSPACE EXPLORATION AGENCY
1
2014
SUMITOMO OSAKA CEMENT CO., LTD.
2
1
2
2006
2009
2013
Nihon Gaishi Seisen Kogyo Co., Ltd.
1
1997
TOSHIBA ELEVATOR KABUSHIKI KAISHA
2
4
2005
2009
H.I.G. VENTURE PARTNERS II, L.P.
2
2012
STANLEY ELECTRIC CO., LTD.
2
6
1
2008
2010
2016
H.I.G. VENTURES-HEXATECH, LLC
2
2012
LINTEC CORPORATION
1
1
1985
1986
SEVIN ROSEN IX AFFILIATES FUND L.P.
2
2012
SAIDEN CHEMICAL INDUSTRY CO., LTD.
1
1
1985
1986
SEVIN ROSEN FUND IX L.P.
2
2012
MCNC ENTERPRISE FUND, L.P.
2
2012
TOKUYAMA CORPORATION
1
2
2
2
2
2011
2012
2013
2014
2015
MITSUI CHEMICALS, INC.
1
1991

Inventor Addresses

AddressDuration
Chiyoda-ku, JPJul 26, 11 - Jul 26, 11
Fukuoka, JPMar 16, 99 - Mar 16, 99
Ibaraki, JPJun 02, 11 - Mar 29, 16
Kunitachi, JPSep 08, 09 - Jun 14, 11
Kunitachi-shi, JPDec 08, 05 - Jul 16, 09
Tokyo, JPFeb 24, 87 - Feb 20, 25
Tokyo-to, JPDec 28, 23 - Dec 28, 23
Tsukuba, JPAug 07, 12 - Oct 21, 14
Tsukuba-shi, JPOct 11, 12 - Oct 11, 12
Yamaguchi, JPSep 03, 15 - May 26, 20

Technology Profile

Technology Matters
B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM 2
B66B: ELEVATORS; ESCALATORS OR MOVING WALKWAYS 3
B82Y: SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES 2

See more…

Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
2025/0063,8592025ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, SEMICONDUCTOR WAFER USING THE ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE, AND MANUFACTURING METHODS OF THE SAME0
2023/0420,6132023ULTRAVIOLET SEMICONDUCTOR LIGHT-EMITTING ELEMENT0
2021/0249,5552021OPTICAL SEMICONDUCTOR ELEMENT COMPRISING N-TYPE ALGAN GRADED LAYER0
110315222021Optical semiconductor element comprising n-type algan graded layer1
107312742020Group III nitride laminate and vertical semiconductor device having the laminate0

See more…


We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level.
> Upgrade to our Level for up to -1 portfolios!.