Arjun Kar-Roy

Inventor

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Work History

Patent OwnerApplications FiledYear
Newport Fab, LLC, Inc.
1
1
1
2009
2012
2015
SAMSUNG ELECTRONICS CO., LTD.
3
1
2003
2004
NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
2
1
1
2
2
1
1
2
1
7
1
2000
2003
2005
2006
2007
2008
2009
2010
2012
2015
2017

Inventor Addresses

AddressDuration
Irvine, CAJun 25, 02 - Jul 18, 06
Irvine, CA, USSep 15, 09 - Apr 07, 20

Technology Profile

Technology Matters
B81B: MICRO-STRUCTURAL DEVICES OR SYSTEMS, e.g. MICRO-MECHANICAL DEVICES 2
B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS 2
G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY 1

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
106150712020Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method0
106150722020Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method0
2018/0247,8562018Structure Having Isolated Deep Substrate Vias With Decreased Pitch And Increased Aspect Ratio And Related Method1
98871232018Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method3
2017/0330,7892017Structure Having Isolated Deep Substrate Vias With Decreased Pitch And Increased Aspect Ratio And Related Method4

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