Kenji Kanbara
Inventor
Stats
- 3 US patents issued
- 9 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 3 US Patents Issued
- 9 US Applications Filed
- 26 Total Citation Count
- Jun 14, 2019 Most Recent Filing
- Oct 18, 2002 Earliest Filing
Work History
Patent Owner | Applications Filed | Year |
---|---|---|
SUMITOMO ELECTRIC INDUSTRIES, LTD. | 2
3 1 | 2013
2014 2015 |
TORAY ENGINEERING CO., LTD. | 2
| 2002
|
Inventor Addresses
Address | Duration |
---|---|
Itami, JP | Aug 27, 19 - Aug 27, 19 |
Itami-shi, JP | Jan 04, 18 - Jan 17, 19 |
Osaka, JP | Jan 31, 17 - Jun 18, 24 |
Osaka-shi, JP | Dec 26, 13 - Aug 08, 19 |
Otsu, JP | Nov 02, 04 - Nov 02, 04 |
Shiga, JP | Jun 12, 03 - Jun 12, 03 |
Technology Profile
Technology | Matters | |
---|---|---|
B41M: | PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING | 1 |
C23C: | COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL | 2 |
C30B: | SINGLE-CRYSTAL GROWTH | 5 |
Patents / Publication
Patents / Publication # | Year of Publication / Issued | Title | Citations |
---|---|---|---|
12014924 | 2024 | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device | 0 |
2021/0320,005 | 2021 | SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE | 0 |
10526699 | 2020 | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device | 0 |
10396163 | 2019 | Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device | 1 |
2019/0242,014 | 2019 | Silicon Carbide Epitaxial Substrate and Method for Manufacturing Silicon Carbide Semiconductor Device | 0 |
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