Masayuki Jyumonji
Inventor
Stats
- 32 US patents issued
- 43 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 32 US Patents Issued
- 43 US Applications Filed
- 420 Total Citation Count
- Jul 16, 2010 Most Recent Filing
- Nov 14, 2002 Earliest Filing
Work History
Patent Owner | Applications Filed | Year |
---|---|---|
ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO., LTD. | 2
9 5 13 7 3 1 1 | 2002
2003 2004 2005 2006 2007 2008 2009 |
ADVANCED LCD TECHNOLOGIES DEVELOPMENT | 2
| 2004
|
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD. | 2
2 | 2004
2006 |
KABUSHIKI KAISHA EKISHO SENTAN GIJUTSU KAIHATSU CENTER | 2
1 | 2003
2005 |
SHARP KABUSHIKI KAISHA | 2
2 2 3 2 2 | 2003
2004 2005 2006 2008 2009 |
JAPAN DISPLAY CENTRAL INC. | 2
2 | 2003
2005 |
LG ELECTRONICS INC. | 2
| 2010
|
Inventor Addresses
Address | Duration |
---|---|
Kawasaki, JP | Aug 18, 09 - Nov 16, 10 |
Kawasaki-shi, JP | Dec 07, 06 - Sep 10, 09 |
Yokohama, JP | Mar 22, 05 - May 22, 12 |
Yokohama-Shi, JP | Jul 22, 04 - Jul 22, 04 |
Yokohama-shi, JP | Jul 17, 03 - Dec 02, 10 |
Technology Profile
Technology | Matters | |
---|---|---|
A61N: | ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY | 1 |
B05B: | SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES | 1 |
B23K: | SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM | 5 |
Patents / Publication
Patents / Publication # | Year of Publication / Issued | Title | Citations |
---|---|---|---|
8183122 | 2012 | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film | 0 |
8114217 | 2012 | Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus | 1 |
2010/0304,546 | 2010 | SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR THIN FILM, WHICH IS SUBJECTED TO HEAT TREATMENT TO HAVE ALIGNMENT MARK, CRYSTALLIZING METHOD FOR THE SEMICONDUCTOR THIN FILM, AND CRYSTALLIZING APPARATUS FOR THE SEMICONDUCTOR THIN FILM | 3 |
7833349 | 2010 | Phase shifter for laser annealing | 0 |
7692864 | 2010 | Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display | 1 |
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