Jungwoo Joh
Inventor
Stats
- 8 US patents issued
- 44 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 8 US Patents Issued
- 44 US Applications Filed
- 85 Total Citation Count
- Nov 5, 2024 Most Recent Filing
- Oct 17, 2012 Earliest Filing
Work History
Patent Owner | Applications Filed | Year |
---|---|---|
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE | 2
| 2012
|
TEXAS INSTRUMENTS INCORPORATED | 5
3 1 1 | 2013
2014 2015 2016 |
Inventor Addresses
Address | Duration |
---|---|
ALLEN, TX, US | Nov 08, 18 - Feb 08, 24 |
Allen, TX, US | Jun 11, 15 - Apr 10, 25 |
Daejeon, KR | Apr 18, 13 - Jul 22, 14 |
Richardson, TX, US | Jun 24, 14 - Jan 24, 17 |
Technology Profile
Technology | Matters | |
---|---|---|
B82Y: | SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES | 2 |
G01R: | MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES | 4 |
H01L: | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | 42 |
Patents / Publication
Patents / Publication # | Year of Publication / Issued | Title | Citations |
---|---|---|---|
2025/0120,157 | 2025 | SEMICONDUCTOR DEVICE WITH SLANTED FIELD PLATE | 0 |
2025/0098,266 | 2025 | GROUP III-N DEVICE INCLUDING SOURCE CONTACT CONNECTED TO SUBSTRATE THROUGH TRENCH | 0 |
2025/0063,755 | 2025 | GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION | 0 |
2025/0048,667 | 2025 | SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS HAVING DIFFERENT ENERGY BARRIER HEIGHTS TO GATE LAYER | 0 |
2025/0006,593 | 2025 | SUBSTRATE CONTACT INTEGRATION IN GALLIUM NITRIDE DEVICES | 0 |
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