Gang-feng Fang
Inventor
Stats
- 10 US patents issued
- 13 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 10 US Patents Issued
- 13 US Applications Filed
- 144 Total Citation Count
- Oct 18, 2010 Most Recent Filing
- Oct 28, 2005 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| INVENSAS CORPORATION | 2
6 | 2005
2008 |
| Chip Memory Technology, Inc. | 2
2 | 2008
2010 |
| MOSYS, INC. | 3
6 | 2006
2008 |
Inventor Addresses
| Address | Duration |
|---|---|
| Alameda, CA | May 03, 07 - Aug 07, 08 |
| Alameda, CA, US | Jan 13, 09 - Apr 05, 11 |
| Fremont, CA, US | Feb 10, 11 - Jul 24, 12 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| G11C: | STATIC STORES | 10 |
| H01L: | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | 6 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 8228726 | 2012 | N-channel SONOS non-volatile memory for embedded in logic | 5 |
| 7983081 | 2011 | Non-volatile memory apparatus and method with deep N-well | 10 |
| 7919367 | 2011 | Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process | 1 |
| 2011/0032,766 | 2011 | N-CHANNEL SONOS NON-VOLATILE MEMORY FOR EMBEDDED IN LOGIC | 7 |
| 2010/0149,874 | 2010 | NON-VOLATILE MEMORY APPARATUS AND METHOD WITH DEEP N-WELL | 5 |
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