YOUNG MIN EEH

Inventor

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Work History

Patent OwnerApplications FiledYear
TOSHIBA MEMORY CORPORATION
1
1
2016
2017

Inventor Addresses

AddressDuration
Seongnam-si Gyeonggi-do, KRSep 14, 17 - Aug 24, 23
Seongnam-si, KRMar 15, 18 - Oct 22, 24
Tokyo, JPJun 08, 23 - Jun 08, 23
Yokohama Kanagawa, JPMar 21, 24 - Mar 21, 24

Technology Profile

Technology Matters
G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 1
G11C: STATIC STORES 20
H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES 8

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
121255102024Magnetoresistance memory device0
120482522024Magnetoresistive memory device0
2024/0099,0192024MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE0
118325282023Magnetic memory device0
2023/0309,4132023MAGNETIC MEMORY DEVICE0

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