Hareesh CHANDRASEKAR

Inventor

Add to Portfolio

Stats

Details

Work History

Patent OwnerApplications FiledYear
INDIAN INSTITUTE OF SCIENCE
1
2017

Inventor Addresses

AddressDuration
BANGALORE, INSep 28, 17 - Sep 28, 17
Bangalore, INDec 01, 20 - Dec 01, 20
Columbus, OH, USDec 19, 23 - Dec 19, 23

Technology Profile

Technology Matters
C30B: SINGLE-CRYSTAL GROWTH 1
H01L: SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 2

Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
118483592023Method of forming lateral pn junctions in III-nitrides using p-type and n-type co-doping and selective p-type activation and deactivation0
108547192020Platform of large metal nitride islands with lateral orientations and low-defect density0
2017/0278,9322017PLATFORM OF LARGE METAL NITRIDE ISLANDS WITH LATERAL ORIENTATIONS AND LOW-DEFECT DENSITY0

See more…


We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level.
> Upgrade to our Level for up to -1 portfolios!.