Rick J Carter

Inventor

Add to Portfolio

Stats

Details

Work History

Patent OwnerApplications FiledYear
GLOBALFOUNDRIES INC.
2
1
2016
2017

Inventor Addresses

AddressDuration
Saratoga Springs, NY, USOct 31, 17 - Jan 04, 22

Technology Profile

Technology Matters
H01L: SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 3

Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
112176782022Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI0
2020/0083,3462020DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI0
105226552019Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI0
2018/0012,9732018DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI0
2017/0330,9532017DIFFERENTIAL SG/EG SPACER INTEGRATION WITH EQUIVALENT NFET/PFET SPACER WIDTHS & DUAL RAISED SOURCE DRAIN EXPITAXIAL SILICON AND TRIPLE-NITRIDE SPACER INTEGRATION ENABLING HIGH-VOLTAGE EG DEVICE ON FDSOI2

See more…


We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level.
> Upgrade to our Level for up to -1 portfolios!.