Masamichi Asano

Inventor

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Work History

Patent OwnerApplications FiledYear
Toshiba Micro-Electronics Corporation
1
1997
TOPPAN PRINTING CO., LTD.
3
2005
Toshiba Micro-Computer Engineering Corp.
2
1984
KABUSHIKI KAISHA TOSHIBA
2
2
4
8
7
5
2
4
4
4
5
1
6
1
1
1
2
2
1984
1985
1987
1988
1989
1990
1991
1992
1993
1994
1995
1996
1997
1998
1999
2000
2004
2005
SHARP KABUSHIKI KAISHA
4
2005
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
14
2015
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD.
9
2016
Tokyo Shibaura Denki Kabushiki Kaisha
6
4
3
4
1
1
1980
1981
1982
1983
1984
1986
Tosbac Computer System Co., Ltd.
1
1
1984
1985

Inventor Addresses

AddressDuration
45-7-308, Denenchofuhoncho, Oota-ku, Tokyo, JPJun 23, 92 - Jun 23, 92
Kyoto, JPDec 06, 07 - Dec 06, 07
Kyoto-shi, JPFeb 04, 10 - Feb 04, 10
Musashino, JPDec 21, 82 - Jan 23, 18
Oa-Ku, JPOct 06, 98 - Oct 06, 98
Ota, JPJul 25, 95 - Jul 25, 95
Ota-Ku, JPMar 25, 97 - Jul 28, 98
TOKYO, JPJul 23, 15 - Feb 16, 17
Tokyo, JPJul 20, 82 - Feb 02, 21
Tokyo-To, JPAug 13, 96 - Nov 21, 06
Tokyo-to, JPNov 19, 96 - Apr 29, 97

Technology Profile

Technology Matters
B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS 1
G06F: ELECTRIC DIGITAL DATA PROCESSING 4
G11C: STATIC STORES 58

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
109100392021Semiconductor device with a plurality of surrounding gate transistors1
2019/0348,1092019SEMICONDUCTOR DEVICE WITH A PLURALITY OF SURROUNDING GATE TRANSISTORS0
103119452019Semiconductor device with a plurality of surrounding gate transistors3
98765042018Semiconductor device0
97160922017Semiconductor device with surrounding gate transistors in a NAND circuit2

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