Vassil Antonov
Inventor
Stats
- 20 US patents issued
- 25 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 20 US Patents Issued
- 25 US Applications Filed
- 123 Total Citation Count
- Mar 17, 2022 Most Recent Filing
- Apr 10, 2008 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| NANYA TECHNOLOGY CORPORATION | 3
2 1 | 2011
2012 2014 |
| U.S. BANK NATIONAL ASSOCIATION | 1
1 | 2014
2015 |
| MICRON TECHNOLOGY, INC. | 4
6 2 10 1 8 3 | 2008
2009 2010 2011 2012 2013 2014 |
Inventor Addresses
| Address | Duration |
|---|---|
| Boise, ID, US | Oct 15, 09 - Jun 30, 22 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| B05D: | PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL | 7 |
| B32B: | LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM | 3 |
| C01G: | COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F | 1 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2022/0208,767 | 2022 | DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED SEMICONDUCTOR DEVICES | 0 |
| 11289487 | 2022 | Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods | 1 |
| 2019/0267,383 | 2019 | DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED SEMICONDUCTOR DEVICES, SYSTEMS, AND METHODS | 10 |
| 9466660 | 2016 | Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures | 3 |
| 9159551 | 2015 | Methods of forming capacitors | 0 |
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