Benoit Amstatt
Inventor
Stats
- 5 US patents issued
- 10 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 5 US Patents Issued
- 10 US Applications Filed
- 19 Total Citation Count
- Jun 29, 2021 Most Recent Filing
- Oct 25, 2013 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| ALEDIA | 2
2 | 2013
2015 |
| COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | 6
2 2 | 2013
2014 2015 |
Inventor Addresses
| Address | Duration |
|---|---|
| Grenoble, FR | May 01, 14 - Aug 24, 23 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| B82Y: | SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES | 6 |
| C03B: | MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL; SUPPLEMENTARY PROCESSES IN THE MANUFACTURE OR SHAPING OF GLASS, OR OF MINERAL OR SLAG WOOL | 1 |
| C30B: | SINGLE-CRYSTAL GROWTH | 5 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2023/0268,460 | 2023 | OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD | 1 |
| 10886427 | 2021 | Optoelectronic device comprising three-dimensional diodes | 0 |
| 10801129 | 2020 | Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements | 0 |
| 10636653 | 2020 | Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps | 2 |
| 10340138 | 2019 | Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide | 0 |
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