Thomas N Adam
Inventor
Stats
- 110 US patents issued
- 146 US Applications filed
- most recent filing
This is official USPTO record data
Details
- 110 US Patents Issued
- 146 US Applications Filed
- 2262 Total Citation Count
- Apr 27, 2017 Most Recent Filing
- Mar 29, 2004 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 2
| 2007
|
| AURIGA INNOVATIONS, INC. | 2
2 | 2012
2014 |
| INTERNATIONAL BUSINESS MACHINES CORPORATION | 4
1 3 3 1 4 3 15 4 4 | 2004
2005 2006 2007 2009 2011 2012 2013 2014 2015 |
| GLOBALFOUNDRIES U.S. 2 LLC COMPANY | 1
| 2014
|
| UNIVERSITY OF DELAWARE | 4
2 | 2004
2006 |
| GLOBALFOUNDRIES INC. | 2
2 6 3 8 5 12 18 68 37 24 12 2 1 | 2004
2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 |
| GOOGLE LLC | 2
| 2005
|
| MATHESON TRI-GAS, INC. | 2
| 2011
|
Inventor Addresses
| Address | Duration |
|---|---|
| Albany, NY, US | Aug 01, 13 - Sep 23, 14 |
| Poughkeepsie, NY | May 02, 06 - Nov 13, 08 |
| Poughkeepsie, NY, US | Nov 18, 04 - Jul 31, 12 |
| Round Rock, TX, US | Dec 20, 12 - Feb 03, 15 |
| Singerlands, NY, US | Jan 05, 12 - Dec 01, 15 |
| Slingerland, NY, US | Aug 03, 10 - Aug 19, 10 |
| Slingerlands, NY, US | Dec 10, 09 - Aug 10, 17 |
Technology Profile
| Technology | Matters | |
|---|---|---|
| B82Y: | SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES | 1 |
| C30B: | SINGLE-CRYSTAL GROWTH | 2 |
| G01J: | MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY | 2 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2017/0229,450 | 2017 | FIELD EFFECT TRANSISTORS | 2 |
| 9728649 | 2017 | Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabrication | 0 |
| 9673296 | 2017 | Semiconductor structure having a source and a drain with reverse facets | 4 |
| 9673196 | 2017 | Field effect transistors with varying threshold voltages | 0 |
| 9530843 | 2016 | FinFET having an epitaxially grown semiconductor on the fin in the channel region | 10 |
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