Widetronix, Inc.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 7355
 
  
 
C30B SINGLE-CRYSTAL GROWTH 254
 
  
 
G21H OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES; UTILISING COSMIC RADIATION 24
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 1100

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9099212 Low volumetric density betavoltaic power deviceJun 10, 12Aug 04, 15[G21H, A61N]
8866245 Nuclear batteriesJan 16, 12Oct 21, 14[H01L, G21H]
8802456 Betavoltaic battery with a shallow junction and a method for making sameFeb 14, 12Aug 12, 14[H01L, G21H]
8487392 High power density betavoltaic batteryAug 06, 10Jul 16, 13[H01L]
8329252 Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactorJul 31, 11Dec 11, 12[C23C]
8153453 Betavoltaic battery with a shallow junction and a method for making sameAug 01, 11Apr 10, 12[H01L]
8134216 Nuclear batteriesMar 07, 11Mar 13, 12[H01L]
8088222 Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materialsJul 27, 07Jan 03, 12[C30B]
8017412 Betavoltaic battery with a shallow junction and a method for making sameSep 23, 10Sep 13, 11[H01L]
7901508 Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactorJan 24, 07Mar 08, 11[C30B]

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2008/0173,239 Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactorAbandonedJan 24, 07Jul 24, 08[C23C]

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