Vishay General Semiconductor LLC

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 43319
 
 
 
1303 EQUIPMENT FOR DISTRIBUTION OR CONTROL OF ELECTRIC POWER368
 
 
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 2157
 
 
 
H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS 275
 
 
 
H01R ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS 1132
 
 
 
H05K PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS 1155

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2014/0357,059 SCHOTTKY RECTIFIERAug 14, 14Dec 04, 14[H01L]
2013/0168,765 TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONSJan 04, 12Jul 04, 13[H01L]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9537017 Process for forming a planar diode using one maskJan 29, 15Jan 03, 17[H01L]
9368584 Gallium nitride power semiconductor device having a vertical structureJul 09, 13Jun 14, 16[H01L]
9331142 Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage currentAug 06, 15May 03, 16[H01L]
9281417 GaN-based schottky diode having large bond pads and reduced contact resistanceFeb 20, 15Mar 08, 16[H01L]
9263820 Electrical press-fit pin for a semiconductor moduleJan 14, 14Feb 16, 16[H01R]
9202935 Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage currentOct 01, 13Dec 01, 15[H01L]
9178015 Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applicationsJan 10, 14Nov 03, 15[H01L]
9041188 Axial semiconductor packageNov 10, 12May 26, 15[H01L]
9018698 Trench-based device with improved trench protectionNov 16, 12Apr 28, 15[H01L]
8981381 GaN-based Schottky diode having dual metal, partially recessed electrodeNov 16, 12Mar 17, 15[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2016/0293,592 THIN BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (TVS) OR ZENER DIODEAbandonedMar 31, 15Oct 06, 16[H01L]
8643152 Double trench rectifierExpiredFeb 27, 12Feb 04, 14[H01L]
8525222 Process for forming a planar diode using one maskExpiredMar 25, 05Sep 03, 13[H01L]
8014117 Low forward voltage drop transient voltage suppressor and method of fabricatingWithdrawnJun 20, 07Sep 06, 11[H02H]
2011/0084,332 TRENCH TERMINATION STRUCTUREAbandonedOct 08, 09Apr 14, 11[H01L]
2008/0153,243 BLANKET IMPLANT DIODEAbandonedFeb 20, 08Jun 26, 08[H01L]
2008/0036,048 Semiconductor junction device having reduced leakage current and method of forming sameAbandonedJul 12, 07Feb 14, 08[H01L]
2007/0090,360 Blanket implant diodeAbandonedMay 02, 06Apr 26, 07[H01L]
2007/0013,053 Semiconductor device and method for manufacturing a semiconductor deviceAbandonedJul 12, 05Jan 18, 07[H01L]
2006/0216,913 Asymmetric bidirectional transient voltage suppressor and method of forming sameAbandonedMar 25, 05Sep 28, 06[H01L, H01G]

Top Inventors for This Owner

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