TOSHIBA CERAMICS CO., LTD.
Patent Owner
Stats
- 7 US PATENTS IN FORCE
- 0 US APPLICATIONS PENDING
- Nov 17, 2009 most recent publication
Details
- 7 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 1,870 Total Citation Count
- Feb 16, 1978 Earliest Filing
- 124 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
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Top Patents (by citation)
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Recent Publications
- No Recent Publications to Display
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
5961874 Flat formed submerged entry nozzle for continuous casting of steelMar 23, 98Oct 05, 99[B22D]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2005/0238,859 Metal member-buried ceramics article and method of producing the sameAbandonedMar 10, 05Oct 27, 05[C04B, B32B]
2005/0215,057 Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereofAbandonedMar 22, 05Sep 29, 05[H01L]
2004/0227,200 Micro-chemical chip, method of manufacturing the same, and method of molding optical unitAbandonedMay 15, 03Nov 18, 04[H01L]
2004/0159,984 Sintered Y2O3 and the manufacturing method for the sameAbandonedFeb 17, 04Aug 19, 04[C04B, B28B]
2003/0029,375 Silicon single crystal wafer fabricating method and silicon single crystal waferAbandonedAug 05, 02Feb 13, 03[C30B]
2002/0009,868 Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said methodAbandonedMay 15, 01Jan 24, 02[B05C]
6025596 Method for measuring epitaxial film thickness of multilayer epitaxial waferExpiredFeb 05, 98Feb 15, 00[G01J]
6004393 Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystalExpiredJan 22, 99Dec 21, 99[C30B]
5808745 Method for measuring a substitutional carbon concentrationExpiredMay 06, 97Sep 15, 98[G01J, G01N]
5700320 Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial directionExpiredMar 22, 96Dec 23, 97[C30B]
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