TEL EPION INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 45317
 
  
 
H01J ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS 3098
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 1388
 
  
 
G21K TECHNIQUES FOR HANDLING PARTICLES OR ELECTROMAGNETIC RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA- OR X-RAY MICROSCOPES 838
 
  
 
B05D PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 384
 
  
 
B44C PRODUCING DECORATIVE EFFECTS 331
 
  
 
C23F NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES 333
 
  
 
A61N ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY 2105
 
  
 
B01J CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS 2107
 
  
 
C03C CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS258

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9875947 Method of surface profile correction using gas cluster ion beamApr 29, 16Jan 23, 18[H01L]
9735019 Process gas enhancement for beam treatment of a substrateSep 01, 15Aug 15, 17[H01J, H01L]
9540725 Method and apparatus for beam deflection in a gas cluster ion beam systemApr 24, 15Jan 10, 17[C23C, H01J, H01L]
9500946 Sidewall spacer patterning method using gas cluster ion beamMar 18, 15Nov 22, 16[H01L, G03F, C23F]
9502209 Multi-step location specific process for substrate edge profile correction for GCIB systemAug 10, 15Nov 22, 16[H01J, G21K]
9355864 Method for increasing adhesion of copper to polymeric surfacesJun 18, 14May 31, 16[H01L]
9343259 GCIB nozzle assemblyJul 31, 15May 17, 16[H01J]
9324567 Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materialsMar 14, 13Apr 26, 16[H01L, C23F]
9305746 Pre-aligned nozzle/skimmerJan 09, 14Apr 05, 16[H01J]
9236221 Molecular beam enhanced GCIB treatmentNov 21, 14Jan 12, 16[H01J]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2015/0270,135 GAS CLUSTER ION BEAM ETCHING PROCESSAbandonedJun 04, 15Sep 24, 15[H01L]
2013/0309,872 GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALSAbandonedJul 25, 13Nov 21, 13[H01L]
8481340 Method for preparing a light-emitting device using gas cluster ion beam processingExpiredMar 29, 11Jul 09, 13[H01L]
8455060 Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beamExpiredFeb 19, 09Jun 04, 13[C23C, H05B]
8440578 GCIB process for reducing interfacial roughness following pre-amorphizationExpiredMar 28, 11May 14, 13[H01L]
8435890 Method to alter silicide properties using GCIB treatmentExpiredMay 29, 12May 07, 13[H01L]
2013/0082,189 PRE-ALIGNED MULTI-BEAM NOZZLE/SKIMMER MODULEAbandonedSep 30, 11Apr 04, 13[H01J, B05B]
2012/0225,532 METHOD FOR CONTROLLING A RESISTIVE PROPERTY IN A RESISTIVE ELEMENT USING A GAS CLUSTER ION BEAMAbandonedMar 03, 11Sep 06, 12[H01L]
2011/0240,602 HIGH-VOLTAGE GAS CLUSTER ION BEAM (GCIB) PROCESSING SYSTEMAbandonedMar 30, 10Oct 06, 11[C23C, C23F]
2011/0084,214 GAS CLUSTER ION BEAM PROCESSING METHOD FOR PREPARING AN ISOLATION LAYER IN NON-PLANAR GATE STRUCTURESAbandonedOct 08, 09Apr 14, 11[H01J]
2010/0243,913 PRE-ALIGNED NOZZLE/SKIMMERAbandonedMar 31, 09Sep 30, 10[H01J, G21K, A61N]
2010/0200,774 MULTI-SEQUENCE FILM DEPOSITION AND GROWTH USING GAS CLUSTER ION BEAM PROCESSINGAbandonedFeb 09, 09Aug 12, 10[H01J]
2010/0193,898 METHOD FOR FORMING TRENCH ISOLATION USING GAS CLUSTER ION BEAM PROCESSINGAbandonedApr 23, 09Aug 05, 10[H01L]
2009/0314,963 METHOD FOR FORMING TRENCH ISOLATIONAbandonedJun 24, 08Dec 24, 09[H01J]
2009/0233,004 METHOD AND SYSTEM FOR DEPOSITING SILICON CARBIDE FILM USING A GAS CLUSTER ION BEAMAbandonedMar 17, 08Sep 17, 09[C23C]
7566888 Method and system for treating an interior surface of a workpiece using a charged particle beamExpiredMay 23, 07Jul 28, 09[G21G, A61N]
2009/0130,861 DUAL DAMASCENE INTEGRATION STRUCTURES AND METHOD OF FORMING IMPROVED DUAL DAMASCENE INTEGRATION STRUCTURESAbandonedOct 06, 08May 21, 09[H01L]
2009/0032,725 APPARATUS AND METHODS FOR TREATING A WORKPIECE USING A GAS CLUSTER ION BEAMAbandonedJul 30, 07Feb 05, 09[G21K]
2008/0245,974 METHOD OF INTRODUCING MATERIAL INTO A SUBSTRATE BY GAS-CLUSTER ION BEAM IRRADIATIONAbandonedJun 19, 08Oct 09, 08[H01J]
2007/0184,656 GCIB Cluster Tool Apparatus and Method of OperationAbandonedFeb 06, 07Aug 09, 07[H01L]

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