SYMETRIX CORPORATION
Patent Owner
Stats
- 98 US PATENTS IN FORCE
- 0 US APPLICATIONS PENDING
- Nov 11, 2010 most recent publication
Details
- 98 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 6,292 Total Citation Count
- Jan 26, 1990 Earliest Filing
- 84 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
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Top Patents (by citation)
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Recent Publications
- No Recent Publications to Display
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
7459318 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the sameApr 26, 06Dec 02, 08[H01L]
7075134 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the sameJul 24, 03Jul 11, 06[H01L]
7064374 Barrier layers for protecting metal oxides from hydrogen degradationJun 21, 04Jun 20, 06[H01L]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2010/0283,028 NON-VOLATILE RESISTANCE SWITCHING MEMORIES AND METHODS OF MAKING SAMEAbandonedJul 21, 10Nov 11, 10[H01L]
7001778 Method of making layered superlattice material with improved microstructureExpiredOct 30, 01Feb 21, 06[H01L]
6867452 Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7ExpiredOct 23, 02Mar 15, 05[H01L]
6864146 Metal oxide integrated circuit on silicon germanium substrateExpiredAug 28, 03Mar 08, 05[H01L]
6830623 Method of liquid deposition by selection of liquid viscosity and other precursor propertiesExpiredMar 12, 02Dec 14, 04[B65G]
6831313 Ferroelectric composite material, method of making same and memory utilizing sameExpiredJul 22, 03Dec 14, 04[H01L]
2004/0211,998 Lanthanide series layered superlattice materials for integrated circuit applicationsAbandonedMay 20, 04Oct 28, 04[H01L]
6787181 Chemical vapor deposition method of making layered superlattice materials using trimethylbismuthExpiredOct 26, 01Sep 07, 04[B05D]
2004/0089,920 Stacked memory cell and process of fabricating sameAbandonedOct 28, 03May 13, 04[H01L]
6686489 Metal organic precursors for transparent metal oxide thin films and method of making sameExpiredNov 09, 01Feb 03, 04[C09K, C07F, C01G]
6660536 Method of making ferroelectric material utilizing anneal in an electrical fieldExpiredFeb 21, 02Dec 09, 03[H01L]
6639262 Metal oxide integrated circuit on silicon germanium substrateExpiredJul 16, 01Oct 28, 03[H01L]
6607980 Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including sameExpiredFeb 12, 01Aug 19, 03[H01L]
2003/0152,813 Lanthanide series layered superlattice materials for integrated circuit appalicationsAbandonedNov 29, 01Aug 14, 03[B32B]
2003/0102,531 Stacked memory cell and process of fabricating sameAbandonedNov 22, 02Jun 05, 03[H01L]
6537830 Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric materialExpiredMar 23, 00Mar 25, 03[H01L]
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