STMICROELECTRONICS (CROLLES 2) SAS

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 391117
 
  
 
G06F ELECTRIC DIGITAL DATA PROCESSING 60387
 
  
 
G11C STATIC STORES 37114
 
  
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 26133
 
  
 
H03K PULSE TECHNIQUE 25106
 
  
 
G02B OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS 23182
 
  
 
H04N PICTORIAL COMMUNICATION, e.g. TELEVISION 23219
 
  
 
G06K RECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS 20178
 
  
 
H04L TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION 18267
 
  
 
H02N ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR1615

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2018/0061,875 VERTICAL TRANSFER GATE TRANSISTOR AND ACTIVE CMOS IMAGE SENSOR PIXEL INCLUDING A VERTICAL TRANSFER GATE TRANSISTORAug 30, 16Mar 01, 18[H01L, H04N]
2018/0061,955 ALL-AROUND GATE FIELD-EFFECT TRANSISTORMar 23, 17Mar 01, 18[H01L]
2018/0062,652 HARDENED STORAGE ELEMENTFeb 27, 17Mar 01, 18[H03K]
2018/0048,123 GERMANIUM-ON-SILICON LASER IN CMOS TECHNOLOGYMar 06, 15Feb 15, 18[H01S]
2017/0317,106 MOS TRANSISTOR STRUCTURE, IN PARTICULAR FOR HIGH VOLTAGES USING A TECHNOLOGY OF THE SILICON-ON-INSULATOR TYPENov 28, 16Nov 02, 17[H01L]
2017/0288,781 HIGHER ORDER OPTICAL PAM MODULATION USING A MACH-ZEHNDER INTERFEROMETER (MZI) TYPE OPTICAL MODULATOR HAVING A BENT OPTICAL PATHMar 29, 16Oct 05, 17[H04L, H04B]
2017/0271,470 METHOD FOR FABRICATION OF A FIELD-EFFECT WITH REDUCED STRAY CAPACITANCEMar 21, 17Sep 21, 17[H01L]
2017/0186,623 METHOD FOR PRODUCING LOW-PERMITTIVITY SPACERSDec 23, 16Jun 29, 17[H01L]
2017/0186,806 HIGH-DYNAMIC-RANGE PIXELMay 20, 16Jun 29, 17[H01L]
2017/0179,035 METHOD OF PLANARIZING RECESSES FILLED WITH COPPERMar 02, 17Jun 22, 17[H01L]

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9922871 Process for producing a contact on an active zone of an integrated circuit, for example produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuitJan 09, 17Mar 20, 18[H01L]
9923016 High-dynamic-range pixelMay 20, 16Mar 20, 18[H01L, H04N]
9917125 Low reflectance back-side imagerDec 04, 15Mar 13, 18[H01L]
9917126 Metal shield trenches and metal substrate contacts supported within the premetallization dielectric (PMD) layer of an integrated circuit using a middle end of line (MEOL) processSep 13, 16Mar 13, 18[H01L]
9911820 Method for fabrication of a field-effect with reduced stray capacitanceMar 21, 17Mar 06, 18[H01L]
9911827 SBFET transistor and corresponding fabrication processDec 08, 16Mar 06, 18[H01L]
9899800 Laser device and process for fabricating such a laser deviceNov 11, 16Feb 20, 18[H01S]
9891450 Integrated electro-optic modulatorMar 30, 16Feb 13, 18[G02F]
9876032 Method of manufacturing a device with MOS transistorsOct 18, 16Jan 23, 18[H01L]
9876076 Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuitDec 02, 15Jan 23, 18[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2017/0194,350 LOW-NOISE MOS TRANSISTORS AND CORRESPONDING CIRCUITAbandonedApr 25, 16Jul 06, 17[H01L]
2016/0351,661 PROCESS FOR PRODUCING MOS TRANSISTORS HAVING A LARGER CHANNEL WIDTH FROM AN SOI AND IN PARTICULAR FDSOI SUBSTRATE, AND CORRESPONDING INTEGRATED CIRCUITAbandonedDec 08, 15Dec 01, 16[H01L]
2016/0284,807 METHOD OF FORMATION OF A SUBSTRATE OF THE SOI, IN PARTICULAR THE FDSOI, TYPE ADAPTED TO TRANSISTORS HAVING GATE DIELECTRICS OF DIFFERENT THICKNESSES, CORRESPONDING SUBSTRATE AND INTEGRATED CIRCUITAbandonedNov 02, 15Sep 29, 16[H01L]
2016/0181,382 METHOD FOR FABRICATING A TRANSISTOR WITH A RAISED SOURCE-DRAIN STRUCTUREAbandonedDec 19, 14Jun 23, 16[H01L]
2016/0099,183 METHOD FOR RELAXING THE TRANSVERSE MECHANICAL STRESSES WITHIN THE ACTIVE REGION OF A MOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUITAbandonedDec 11, 15Apr 07, 16[H01L]
2015/0300,328 THERMOELECTRIC GENERATOR COMPRISING A DEFORMABLE BY-LAYER MEMBRANE EXHIBITING MAGNETIC PROPERTIESAbandonedApr 14, 15Oct 22, 15[H02N, F03G]
2015/0255,540 COMPONENT, FOR EXAMPLE NMOS TRANSISTOR, WITH ACTIVE REGION WITH RELAXED COMPRESSION STRESSES, AND FABRICATION METHODAbandonedMay 18, 15Sep 10, 15[H01L]
2015/0221,782 VERTICAL GALLIUM NITRIDE SCHOTTKY DIODEAbandonedJan 28, 15Aug 06, 15[H01L]
2015/0137,133 FORMING OF A HEAVILY-DOPED SILICON LAYER ON A MORE LIGHTLY-DOPED SILICON SUBSTRATEAbandonedNov 11, 14May 21, 15[H01L]
2015/0116,874 OVERVOLTAGE PROTECTION CIRCUITAbandonedOct 23, 14Apr 30, 15[H01L, H02H]
2015/0097,241 METHOD FOR RELAXING THE TRANSVERSE MECHANICAL STRESSES WITHIN THE ACTIVE REGION OF A MOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUITAbandonedOct 03, 14Apr 09, 15[H01L]
2015/0091,089 AIR-SPACER MOS TRANSISTORAbandonedSep 29, 14Apr 02, 15[H01L]
2015/0021,668 PHOTOSENSITIVE CELL OF AN IMAGE SENSORAbandonedJul 18, 14Jan 22, 15[H01L]
2015/0022,987 ELECTRONIC DEVICE COMPRISING AN INTEGRATED CIRCUIT CHIP PROVIDED WITH PROJECTING ELECTRICAL CONNECTION PADSAbandonedJul 14, 14Jan 22, 15[H05K]
2014/0376,857 PHOTONIC INTEGRATED CIRCUIT AND FABRICATION PROCESSAbandonedJun 23, 14Dec 25, 14[G02B]
2014/0370,668 METHOD OF MAKING A TRANSITORAbandonedFeb 11, 14Dec 18, 14[H01L]
2014/0340,133 RADIATION HARDENED CIRCUITAbandonedMay 13, 14Nov 20, 14[H03L, H03K]
2014/0206,154 SEMICONDUCTOR DEVICE COMPRISING A PASSIVE COMPONENT OF CAPACITORS AND PROCESS FOR FABRICATIONAbandonedMar 21, 14Jul 24, 14[H01L]
2014/0106,529 FINFET DEVICE WITH SILICIDED SOURCE-DRAIN REGIONS AND METHOD OF MAKING SAME USING A TWO STEP ANNEALAbandonedOct 10, 13Apr 17, 14[H01L]
2014/0050,221 INTERCONNECT ARRANGEMENTAbandonedAug 16, 12Feb 20, 14[H04L]

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