SOKO KAGAKU CO., LTD.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 14348
 
 
 
C30B SINGLE-CRYSTAL GROWTH 353
 
 
 
C08F MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS 1124
 
 
 
H01S DEVICES USING STIMULATED EMISSION191

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2016/0319,459 METHOD FOR PRODUCING A TEMPLATE FOR EPITAXIAL GROWTH HAVING A SAPPHIRE (0001) SUBSTRATE, AN INITIAL-STAGE AlN LAYER AND LATERALLY OVERGROWN AlxGayN (0001) LAYERJul 08, 16Nov 03, 16[H01L, C30B]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9812611 Nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting deviceApr 03, 15Nov 07, 17[H01L]
9556535 Template for epitaxial growth, method for producing the same, and nitride semiconductor deviceAug 29, 14Jan 31, 17[H01L, H01S, C30B]
9502606 Nitride semiconductor ultraviolet light-emitting elementApr 27, 16Nov 22, 16[H01L]
9450157 Ultraviolet light emitting device using metal non-bondable amorphous fluororesin molding compoundApr 17, 14Sep 20, 16[H01L]
9412586 Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layerDec 25, 09Aug 09, 16[H01L, C30B]
9356192 Nitride semiconductor ultraviolet light-emitting elementAug 09, 11May 31, 16[H01L]
9281439 Nitride semiconductor element and method for producing sameSep 30, 11Mar 08, 16[H01L]
9112115 Nitride semiconductor ultraviolet light-emitting elementApr 21, 11Aug 18, 15[H01L]
9029174 Method for manufacturing semiconductor deviceFeb 25, 11May 12, 15[H01L]
8822976 Nitride semiconductor ultraviolet light-emitting elementMar 23, 11Sep 02, 14[H01L]

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