SICED ELECTRONICS DEVELOPMENT GMBH & CO. KG

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
C30B SINGLE-CRYSTAL GROWTH 254
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 2360
 
  
 
B32B LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM1156

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8803160 Lightly doped silicon carbide wafer and use thereof in high power devicesDec 29, 11Aug 12, 14[H01L]
8097524 Lightly doped silicon carbide wafer and use thereof in high power devicesJan 13, 09Jan 17, 12[C30B]
7482068 Lightly doped silicon carbide wafer and use thereof in high power devicesAug 22, 03Jan 27, 09[H01L, C30B, B32B]

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
6365494 Method for producing an ohmic contactExpiredMar 23, 01Apr 02, 02[H01L]
6316791 Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structureExpiredFeb 22, 00Nov 13, 01[H01L]
6232625 Semiconductor configuration and use thereofExpiredDec 23, 99May 15, 01[H01L]
6107168 Process for passivating a silicon carbide surface against oxygenExpiredDec 18, 97Aug 22, 00[H01R]

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