SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY
Patent Owner
Stats
- 1 US PATENTS IN FORCE
- 0 US APPLICATIONS PENDING
- Sep 08, 2016 most recent publication
Details
- 1 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 154 Total Citation Count
- Feb 11, 2010 Earliest Filing
- 9 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
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Recent Publications
- No Recent Publications to Display
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
8828812 Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereofSep 19, 12Sep 09, 14[H01L]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2014/0291,597 High-speed, High-density, and Low-power consumption Phase-change Memory Unit, and Preparation Method ThereofAbandonedDec 27, 12Oct 02, 14[H01L]
2014/0192,592 SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIALAbandonedDec 26, 12Jul 10, 14[C23C, G11C]
2013/0221,412 Device System Structure Based On Hybrid Orientation SOI and Channel Stress and Preparation Method ThereofAbandonedSep 19, 12Aug 29, 13[H01L]
2013/0054,219 Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method ThereofAbandonedSep 25, 11Feb 28, 13[G06G]
2012/0276,718 METHOD OF FABRICATING GRAPHENE-BASED FIELD EFFECT TRANSISTORAbandonedJun 08, 11Nov 01, 12[H01L]
2012/0049,262 A DRAM CELL STRUCTURE WITH EXTENDED TRENCH AND A MANUFACTURING METHOD THEREOFAbandonedNov 03, 10Mar 01, 12[H01L, B82Y]
2012/0018,809 MOS DEVICE FOR ELIMINATING FLOATING BODY EFFECTS AND SELF-HEATING EFFECTSAbandonedSep 08, 10Jan 26, 12[H01L]
2011/0291,191 MOS Structure with Suppressed SOI Floating Body Effect and Manufacturing Method thereofAbandonedJul 14, 10Dec 01, 11[H01L]
2011/0221,002 MOS-TYPE ESD PROTECTION DEVICE IN SOI AND MANUFACTURING METHOD THEREOFAbandonedJul 14, 10Sep 15, 11[H01L]
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