SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY

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H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 1361

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8828812 Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereofSep 19, 12Sep 09, 14[H01L]

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2014/0291,597 High-speed, High-density, and Low-power consumption Phase-change Memory Unit, and Preparation Method ThereofAbandonedDec 27, 12Oct 02, 14[H01L]
2014/0192,592 SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIALAbandonedDec 26, 12Jul 10, 14[C23C, G11C]
2013/0221,412 Device System Structure Based On Hybrid Orientation SOI and Channel Stress and Preparation Method ThereofAbandonedSep 19, 12Aug 29, 13[H01L]
2013/0054,219 Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method ThereofAbandonedSep 25, 11Feb 28, 13[G06G]
2012/0276,718 METHOD OF FABRICATING GRAPHENE-BASED FIELD EFFECT TRANSISTORAbandonedJun 08, 11Nov 01, 12[H01L]
2012/0049,262 A DRAM CELL STRUCTURE WITH EXTENDED TRENCH AND A MANUFACTURING METHOD THEREOFAbandonedNov 03, 10Mar 01, 12[H01L, B82Y]
2012/0018,809 MOS DEVICE FOR ELIMINATING FLOATING BODY EFFECTS AND SELF-HEATING EFFECTSAbandonedSep 08, 10Jan 26, 12[H01L]
2011/0291,191 MOS Structure with Suppressed SOI Floating Body Effect and Manufacturing Method thereofAbandonedJul 14, 10Dec 01, 11[H01L]
2011/0221,002 MOS-TYPE ESD PROTECTION DEVICE IN SOI AND MANUFACTURING METHOD THEREOFAbandonedJul 14, 10Sep 15, 11[H01L]

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