SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
Patent Owner
Stats
- 41 US PATENTS IN FORCE
- 3 US APPLICATIONS PENDING
- Feb 13, 2018 most recent publication
Details
- 41 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 681 Total Citation Count
- Jun 11, 2007 Earliest Filing
- 30 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
Rank in Class
Top Patents (by citation)
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Recent Publications
Publication #
Title
Filing Date
Pub Date
Intl Class
2017/0349,788 POLYDISPERSE LARGE-PARTICLE-SIZE SILICA SOL AND METHOD OF PREPARING THE SAMEJul 26, 16Dec 07, 17[C09K, C01B, H01L, C09G]
2015/0207,070 Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application ThereofDec 27, 12Jul 23, 15[C23C, H01L]
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
9890472 Monolithic integrated lattice mismatched crystal template and preparation method thereofApr 06, 12Feb 13, 18[H01L, C30B]
9741919 Nano-scale superconducting quantum interference device and manufacturing method thereofApr 08, 14Aug 22, 17[H01L]
9684094 Photonic crystal supporting high frequency sensitivity self-collimation phenomenon and design method and use thereofMar 28, 14Jun 20, 17[G02B, G02F]
9625487 Capacitive acceleration sensor with a bending elastic beam and preparation method thereofDec 04, 12Apr 18, 17[B81C, G01P]
9625488 Variable area capacitive lateral acceleration sensor and preparation method thereofFeb 26, 13Apr 18, 17[B81C, G01P]
9601337 Manufacturing method of graphene modulated high-K oxide and metal gate MOS deviceFeb 21, 14Mar 21, 17[H01L]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2015/0325,468 METHOD FOR PREPARING MATERIAL ON INSULATOR BASED ON ENHANCED ADSORPTIONAbandonedMar 21, 13Nov 12, 15[H01L]
2014/0291,597 High-speed, High-density, and Low-power consumption Phase-change Memory Unit, and Preparation Method ThereofAbandonedDec 27, 12Oct 02, 14[H01L]
2014/0192,592 SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIALAbandonedDec 26, 12Jul 10, 14[C23C, G11C]
8667440 TCAD emulation calibration method of SOI field effect transistorExpiredSep 23, 11Mar 04, 14[G06F]
8629029 Vertical SOI bipolar junction transistor and manufacturing method thereofExpiredJul 14, 10Jan 14, 14[H01L]
8580659 Method of fabricating high-mobility dual channel material based on SOI substrateExpiredJul 25, 11Nov 12, 13[H01L]
2013/0292,629 PHASE CHANGE MEMORY CELL AND FABRICATION METHOD THEREOFAbandonedJun 23, 11Nov 07, 13[H01L]
2013/0264,609 Semiconductor Structure of Hybrid of Coplanar Ge and III-V and Preparation Method ThereofAbandonedMay 16, 12Oct 10, 13[H01L]
8501593 Method of NiSiGe epitaxial growth by introducing Al interlayerExpiredJul 25, 11Aug 06, 13[H01L]
8461651 ESD protection devices for SOI integrated circuit and manufacturing method thereofExpiredDec 16, 10Jun 11, 13[H01L]
8409962 Manufacturing method of copper interconnection structure with MIM capacitorExpiredJul 14, 10Apr 02, 13[H01L]
2013/0078,424 Hexagonal Boron Nitride Substrate With Monatomic Layer Step, And Preparation Method And Application ThereofAbandonedAug 05, 11Mar 28, 13[C23C]
2013/0062,696 SOI Semiconductor Structure with a Hybrid of Coplanar Germanium and III-V, and Preparation Method thereofAbandonedMay 16, 12Mar 14, 13[H01L]
2013/0054,219 Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method ThereofAbandonedSep 25, 11Feb 28, 13[G06G]
8377755 Method for fabricating SOI high voltage power chip with trenchesExpiredSep 07, 10Feb 19, 13[H01L]
8324035 Manufacturing method of SOI MOS device eliminating floating body effectsExpiredSep 08, 10Dec 04, 12[H01L]
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