SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 36326
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 695
 
 
 
G11C STATIC STORES 5146
 
 
 
C01B NON-METALLIC ELEMENTS; COMPOUNDS THEREOF475
 
 
 
C30B SINGLE-CRYSTAL GROWTH 452
 
 
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 4155
 
 
 
G01P MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT 354
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 3444
 
 
 
B05D PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 285
 
 
 
C09G POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES215

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0349,788 POLYDISPERSE LARGE-PARTICLE-SIZE SILICA SOL AND METHOD OF PREPARING THE SAMEJul 26, 16Dec 07, 17[C09K, C01B, H01L, C09G]
2015/0292,110 METHOD FOR PREPARING GRAPHENEJul 03, 12Oct 15, 15[C01B, C30B]
2015/0207,070 Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application ThereofDec 27, 12Jul 23, 15[C23C, H01L]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9890472 Monolithic integrated lattice mismatched crystal template and preparation method thereofApr 06, 12Feb 13, 18[H01L, C30B]
9850571 Method for preparing grapheneJul 03, 12Dec 26, 17[C23C, C01B, B82Y]
9741533 Image type electron spin polarimeterSep 10, 13Aug 22, 17[H01J]
9741568 Sulfur doping method for grapheneMay 20, 14Aug 22, 17[C01B, H01L]
9741919 Nano-scale superconducting quantum interference device and manufacturing method thereofApr 08, 14Aug 22, 17[H01L]
9684094 Photonic crystal supporting high frequency sensitivity self-collimation phenomenon and design method and use thereofMar 28, 14Jun 20, 17[G02B, G02F]
9625487 Capacitive acceleration sensor with a bending elastic beam and preparation method thereofDec 04, 12Apr 18, 17[B81C, G01P]
9625488 Variable area capacitive lateral acceleration sensor and preparation method thereofFeb 26, 13Apr 18, 17[B81C, G01P]
9601337 Manufacturing method of graphene modulated high-K oxide and metal gate MOS deviceFeb 21, 14Mar 21, 17[H01L]
9570294 Preparation method of graphene nanoribbon on h-BNJul 20, 15Feb 14, 17[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2015/0325,468 METHOD FOR PREPARING MATERIAL ON INSULATOR BASED ON ENHANCED ADSORPTIONAbandonedMar 21, 13Nov 12, 15[H01L]
2014/0291,597 High-speed, High-density, and Low-power consumption Phase-change Memory Unit, and Preparation Method ThereofAbandonedDec 27, 12Oct 02, 14[H01L]
2014/0192,592 SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIALAbandonedDec 26, 12Jul 10, 14[C23C, G11C]
8667440 TCAD emulation calibration method of SOI field effect transistorExpiredSep 23, 11Mar 04, 14[G06F]
8629029 Vertical SOI bipolar junction transistor and manufacturing method thereofExpiredJul 14, 10Jan 14, 14[H01L]
2014/0008,567 CHEMICAL MECHANICAL POLISHING SLURRYAbandonedJun 27, 11Jan 09, 14[C09G]
8580659 Method of fabricating high-mobility dual channel material based on SOI substrateExpiredJul 25, 11Nov 12, 13[H01L]
2013/0292,629 PHASE CHANGE MEMORY CELL AND FABRICATION METHOD THEREOFAbandonedJun 23, 11Nov 07, 13[H01L]
2013/0264,609 Semiconductor Structure of Hybrid of Coplanar Ge and III-V and Preparation Method ThereofAbandonedMay 16, 12Oct 10, 13[H01L]
8501593 Method of NiSiGe epitaxial growth by introducing Al interlayerExpiredJul 25, 11Aug 06, 13[H01L]
8460976 Manufacturing method of SOI high-voltage power deviceExpiredSep 07, 10Jun 11, 13[H01L]
8461651 ESD protection devices for SOI integrated circuit and manufacturing method thereofExpiredDec 16, 10Jun 11, 13[H01L]
8409962 Manufacturing method of copper interconnection structure with MIM capacitorExpiredJul 14, 10Apr 02, 13[H01L]
2013/0078,424 Hexagonal Boron Nitride Substrate With Monatomic Layer Step, And Preparation Method And Application ThereofAbandonedAug 05, 11Mar 28, 13[C23C]
2013/0062,696 SOI Semiconductor Structure with a Hybrid of Coplanar Germanium and III-V, and Preparation Method thereofAbandonedMay 16, 12Mar 14, 13[H01L]
2013/0054,219 Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method ThereofAbandonedSep 25, 11Feb 28, 13[G06G]
8377755 Method for fabricating SOI high voltage power chip with trenchesExpiredSep 07, 10Feb 19, 13[H01L]
8330228 Hybrid material inversion mode GAA CMOSFETExpiredFeb 11, 10Dec 11, 12[H01L]
8330229 Hybrid orientation inversion mode GAA CMOSFETExpiredFeb 11, 10Dec 11, 12[H01L]
8324035 Manufacturing method of SOI MOS device eliminating floating body effectsExpiredSep 08, 10Dec 04, 12[H01L]

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