SEMI SOLUTIONS, LLC
Patent Owner
Stats
- 11 US PATENTS IN FORCE
- 0 US APPLICATIONS PENDING
- Dec 19, 2017 most recent publication
Details
- 11 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 137 Total Citation Count
- Dec 29, 2004 Earliest Filing
- 4 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
Rank in Class
Top Patents (by citation)
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Recent Publications
- No Recent Publications to Display
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
8247840 Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diodeJan 05, 09Aug 21, 12[H01L]
8048732 Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistorFeb 08, 10Nov 01, 11[H01L]
7863689 Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistorJan 05, 09Jan 04, 11[H01L]
7691702 Method of manufacture of an apparatus for increasing stability of MOS memory cellsApr 24, 08Apr 06, 10[H01L]
7683433 Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistorsSep 19, 06Mar 23, 10[H01L]
7586155 Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistorsApr 19, 07Sep 08, 09[H03K, H01L]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2016/0260,816 Reduced Variation MOSFET Using a Drain-Extension-Last ProcessAbandonedMay 16, 16Sep 08, 16[H01L]
7651905 Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contactsExpiredApr 19, 05Jan 26, 10[H01L]
2009/0201,075 Method and Apparatus for MOSFET Drain-Source Leakage ReductionAbandonedMar 06, 09Aug 13, 09[H03K]
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