SANDISK 3D LLC

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 34328
 
  
 
G11C STATIC STORES 6145
 
  
 
C03C CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS159
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 1100
 
  
 
G06F ELECTRIC DIGITAL DATA PROCESSING 1446
 
  
 
H04L TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION 1284

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9786368 Two stage forming of resistive random access memory cellsNov 24, 14Oct 10, 17[H01L, G11C]
9543516 Method for forming a doped metal oxide for use in resistive switching memory elementsJun 27, 14Jan 10, 17[H01L]
9425394 Doped oxide dielectrics for resistive random access memory cellsDec 10, 14Aug 23, 16[H01L]
9299928 Nonvolatile memory device having a current limiting elementFeb 19, 15Mar 29, 16[H01L, G11C]
9276210 Conductive barriers for ternary nitride thin-film resistorsDec 04, 14Mar 01, 16[H01L]
9269902 Embedded resistors for resistive random access memory cellsDec 26, 13Feb 23, 16[H01L]
9246085 Shaping ReRAM conductive filaments by controlling grain-boundary densityJul 23, 14Jan 26, 16[H01L]
9246091 ReRAM cells with diffusion-resistant metal silicon oxide layersJul 23, 14Jan 26, 16[H01L]
9224951 Current-limiting electrodesJul 21, 14Dec 29, 15[H01L]
9184379 Capping thin-film resistors to control interface oxidationJul 18, 14Nov 10, 15[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2016/0020,388 Resistive switching by breaking and re-forming covalent bondsAbandonedJul 21, 14Jan 21, 16[H01L]
2014/0284,545 In-Situ Nitride Initiation Layer For RRAM Metal Oxide Switching MaterialAbandonedApr 23, 14Sep 25, 14[H01L]
2014/0175,360 Bilayered Oxide Structures for ReRAM CellsAbandonedDec 20, 12Jun 26, 14[H01L]
2014/0175,367 Materials for Thin Resisive Switching Layers of Re-RAM CellsAbandonedDec 20, 12Jun 26, 14[H01L]
2013/0334,484 Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory ApplicationsAbandonedAug 21, 13Dec 19, 13[H01L]
2013/0134,373 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYERAbandonedNov 28, 11May 30, 13[H01L]
2011/0230,162 SRVCC EMERGENCY CALL SUPPORT APPARATUS, SYSTEM AND METHODAbandonedNov 12, 09Sep 22, 11[H04W]
2009/0282,267 PARTIAL SCRAMBLING TO REDUCE CORRELATIONAbandonedJun 30, 08Nov 12, 09[H04L]
2008/0017,890 Highly dense monolithic three dimensional memory array and method for formingAbandonedJun 30, 06Jan 24, 08[H01L]
2006/0085,816 Method and apparatus to control playback in a download-and-view video on demand systemAbandonedOct 18, 04Apr 20, 06[H04M, H04N, G06Q]
6649451 Structure and method for wafer comprising dielectric and semiconductorExpiredFeb 02, 01Nov 18, 03[H01L]
6639312 Dummy wafers and methods for making the sameExpiredNov 07, 01Oct 28, 03[H01L]
2003/0102,528 Wafer surface that facilitates particle removalAbandonedOct 04, 02Jun 05, 03[H01L]
2002/0105,057 Wafer surface that facilitates particle removalAbandonedFeb 02, 01Aug 08, 02[H01L, B44C]

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