NEXGEN POWER SYSTEMS, INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 72290
 
  
 
H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF 597
 
  
 
H05K PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS 3153
 
  
 
1302 POWER TRANSFORMERS, RECTIFIERS, BATTERIES AND ACCUMULATORS233
 
  
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 199
 
  
 
H03K PULSE TECHNIQUE 1130

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2018/0048,225 METHOD AND SYSTEM FOR BRIDGELESS AC-DC CONVERTERMay 30, 17Feb 15, 18[H02M]
2016/0241,148 METHOD AND SYSTEM FOR INTEGRATED POWER SUPPLY WITH ACCESSORY FUNCTIONSFeb 12, 16Aug 18, 16[H02M, H05K]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9531256 AC-DC converter with adjustable outputDec 03, 13Dec 27, 16[H02M, G05F]
9525039 Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layerSep 14, 15Dec 20, 16[H01L]
9508838 InGaN ohmic source contacts for vertical power devicesMar 13, 15Nov 29, 16[H01L]
9502544 Method and system for planar regrowth in GaN electronic devicesJul 31, 15Nov 22, 16[H01L]
9484470 Method of fabricating a GaN P-i-N diode using implantationAug 24, 15Nov 01, 16[H01L]
9472684 Lateral GaN JFET with vertical drift regionNov 13, 12Oct 18, 16[H01L]
9450112 GaN-based Schottky barrier diode with algan surface layerSep 08, 14Sep 20, 16[H01L]
D762573 Power supplyMay 01, 15Aug 02, 16[1302]
9397186 Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch backJan 21, 15Jul 19, 16[H01L]
9391179 Vertical GaN JFET with low gate-drain capacitance and high gate-source capacitanceJan 23, 15Jul 12, 16[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2017/0133,481 HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATESAbandonedMay 17, 16May 11, 17[H01L]
2016/0190,276 METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE BASED DEVICESAbandonedJul 22, 15Jun 30, 16[H01L]
2016/0190,296 GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING AN ALUMINUM GALLIUM NITRIDE BARRIER LAYERAbandonedSep 14, 15Jun 30, 16[H01L]
2016/0190,351 METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATEAbandonedOct 19, 15Jun 30, 16[H01L]
2016/0190,954 METHOD AND SYSTEM FOR BRIDGELESS AC-DC CONVERTERAbandonedDec 29, 15Jun 30, 16[H02M]
2016/0072,317 METHOD AND SYSTEM FOR POWER PROVISIONINGAbandonedSep 08, 14Mar 10, 16[H02J]
2016/0043,182 METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE BASED ELECTRONICSAbandonedAug 12, 15Feb 11, 16[H01L]
2016/0043,198 SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALSAbandonedOct 26, 15Feb 11, 16[H01L]
2016/0013,045 METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGINEERED SUBSTRATESAbandonedFeb 09, 15Jan 14, 16[H01L]
2015/0357,919 METHOD AND SYSTEM FOR VARIABLE OUTPUT POWER SUPPLYAbandonedJun 10, 14Dec 10, 15[H02M]
2015/0340,449 GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNELAbandonedJul 30, 15Nov 26, 15[H01L]
2015/0340,514 METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALIGNED SOURCE AND GATEAbandonedJul 30, 15Nov 26, 15[H01L]
2015/0325,677 METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NITRIDE BASED ELECTRONICSAbandonedJul 20, 15Nov 12, 15[H01L]
2015/0263,628 RESONANT CONVERTER AND CONTROLAbandonedMar 14, 14Sep 17, 15[H02M]
2015/0263,639 ADAPTIVE SYNCHRONOUS SWITCHING IN A RESONANT CONVERTERAbandonedMar 14, 14Sep 17, 15[H02M]
2015/0263,640 ADAPTIVE SYNCHRONOUS SWITCHING IN A RESONANT CONVERTERAbandonedDec 17, 14Sep 17, 15[H02M]
2015/0243,758 METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL TRANSISTORAbandonedMay 13, 15Aug 27, 15[H01L]
2015/0206,768 METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICSAbandonedDec 05, 14Jul 23, 15[H01L]
2015/0188,521 METHOD AND SYSTEM FOR OPERATING GALLIUM NITRIDE ELECTRONICSAbandonedDec 22, 14Jul 02, 15[H03K, H01L]
2015/0102,360 BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICESAbandonedDec 19, 14Apr 16, 15[H01L]

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